ATC 1800-IM 型

The system shown above is equipped with a gridded ion source positioned for uniform milling of a 200mm diameter substrate. System features a 1200 l/s turbopump, load-lock with 6-position cassette, and substrate holder with backside gas cooling and rotation. Etch rate is 320 A/min of SiO2 with +/- 2% uniformity.

ATC ORION-IM 型

The system shown above is equipped with an ICP RF plasma source with ion energies up to 300 eV for low energy milling of substrates up to 150mm in diameter. System also includes a 700 l/s turbopump and substrate holder with simultaneous water cooling, rotation, and 0-80 degree tilting capability.